? 2010 ixys corporation, all rights reserved genx3 tm 600v igbt IXGH60N60C3 high speed pt igbt for 40-100khz switching v ces = 600v i c110 = 60a v ce(sat) 2.5v t fi (typ) = 50ns symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 600 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.5 v i ces v ce = v ces, v ge = 0v 50 a t j = 125 c 1 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 40a, v ge = 15v 2.2 2.5 v t j = 125 c 1.7 v symbol test conditions maximum ratings v ces t j = 25c to 150c 600 v v cgr t j = 25c to 150c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c (limited by leads) 75 a i c110 t c = 110c 60 a i cm t c = 25c, 1ms 360 a i a t c = 25c 40 a e as t c = 25c 400 mj ssoa v ge = 15v, t vj = 125c, r g = 3 i cm = 125 a (rbsoa) clamped inductive load v ce v ces p c t c = 25c 380 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 6g ds99928b(01/10) features z optimized for low switching losses z square rbsoa z avalanche rated z international standard package advantages z high power density z low gate drive requirement applications z high frequency power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts g = gate c = collector e = emitter tab = collector to-247 ad g c e tab
ixys reserves the right to change limits, test conditions, and dimensions. IXGH60N60C3 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 40a, v ce = 10v, note 1 23 38 s c ies 2810 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 210 pf c res 80 pf q g 115 nc q ge i c = 40a, v ge = 15v, v ce = 0.5 ? v ces 22 nc q gc 43 nc t d(on) 21 ns t ri 33 ns e on 0.80 mj t d(off) 70 110 ns t fi 50 ns e off 0.45 0.80 mj t d(on) 21 ns t ri 33 ns e on 1.25 mj t d(off) 112 ns t fi 86 ns e off 0.80 mj r thjc 0.33 c/w r thck 0.21 c/w inductive load, t j = 125 c i c = 40a, v ge = 15v v ce = 480v, r g = 3 note 2 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . inductive load, t j = 25 c i c = 40a, v ge = 15v v ce = 480v, r g = 3 note 2 e ? p to-247 (ixgh) outline 1 2 3 terminals: 1 - gate 2 - collector 3 - emitted tab - collector dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc
? 2010 ixys corporation, all rights reserved IXGH60N60C3 fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 0246810121416 v ce - volts i c - amperes v ge = 15v 13v 7v 9v 11v 5v fig. 3. output characteristics @ t j = 125oc 0 10 20 30 40 50 60 70 80 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 80a i c = 40a i c = 20a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 80a 40a 20a t j = 25oc fig. 6. input admittance 0 20 40 60 80 100 120 140 160 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGH60N60C3 fig. 7. transconductance 0 10 20 30 40 50 60 70 0 20 40 60 80 100 120 140 160 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 20 40 60 80 100 120 140 100 150 200 250 300 350 400 450 500 550 600 v ce - volts i c - amperes t j = 125oc r g = 3 ? dv / dt < 10v / ns fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 10 20 30 40 50 60 70 80 90 100 110 120 q g - nanocoulombs v ge - volts v ce = 300v i c = 40a i g = 10 ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
? 2010 ixys corporation, all rights reserved IXGH60N60C3 fig. 12. inductive switching energy loss vs. gate resistance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 3456789101112131415 r g - ohms e off - millijoules 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 480v i c = 80a i c = 40a fig. 17. inductive turn-off switching times vs. junction temperature 20 40 60 80 100 120 140 160 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 60 70 80 90 100 110 120 130 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 3 ? , v ge = 15v v ce = 480v i c = 80a i c = 40a fig. 15. inductive turn-off switching times vs. gate resistance 60 70 80 90 100 110 120 130 140 150 160 170 3456789101112131415 r g - ohms t f - nanoseconds 60 80 100 120 140 160 180 200 220 240 260 280 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 480v i c = 80a i c = 40a fig. 13. inductive switching energy loss vs. collector current 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 20 25 30 35 40 45 50 55 60 65 70 75 80 i c - amperes e off - millijoules 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 e on - millijoules e off e on - - - - r g = 3 ? , v ge = 15v v ce = 480v t j = 125oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 e on - millijoules e off e on - - - - r g = 3 ? , v ge = 15v v ce = 480v i c = 80a i c = 40a fig. 16. inductive turn-off switching times vs. collector current 20 40 60 80 100 120 140 160 180 20 25 30 35 40 45 50 55 60 65 70 75 80 i c - amperes t f - nanoseconds 60 70 80 90 100 110 120 130 140 t d(off) - nanoseconds t f t d(off) - - - - r g = 3 ? , v ge = 15v v ce = 480v t j = 125oc t j = 25oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGH60N60C3 ixys ref: g_60n60c3(6d)01-15-10-e fig. 19. inductive turn-on switching times vs. collector current 10 20 30 40 50 60 70 80 90 100 110 20 25 30 35 40 45 50 55 60 65 70 75 80 i c - amperes t r - nanoseconds 18 19 20 21 22 23 24 25 26 27 28 t d(on) - nanoseconds t r t d(on) - - - - r g = 3 ? , v ge = 15v v ce = 480v t j = 25oc, 125oc fig. 20. inductive turn-on switching times vs. junction temperature 20 30 40 50 60 70 80 90 100 110 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds 20 21 22 23 24 25 26 27 28 29 t d(on) - nanoseconds t r t d(on) - - - - r g = 3 ? , v ge = 15v v ce = 480v i c = 40a i c = 80a fig. 18. inductive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 3 4 5 6 7 8 9 101112131415 r g - ohms t r - nanoseconds 15 20 25 30 35 40 45 50 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 480v i c = 40a i c = 80a
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